Ramos Technology EWB8GB681CA3-16IC 8GB vs G Skill Intl F4-2800C15-16GRKD 16GB

总分

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分

G Skill Intl F4-2800C15-16GRKD 16GB

G Skill Intl F4-2800C15-16GRKD 16GB

差异规格评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB

需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 11% 更低的延时
更快的读取速度，GB/s

15.3 14.1

测试中的平均数值

G Skill Intl F4-2800C15-16GRKD 16GB

需要考虑的原因
G Skill Intl F4-2800C15-16GRKD 16GB

报告一个错误

更快的写入速度，GB/s

10.9 9.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramos Technology EWB8GB681CA3-16IC 8GB

G Skill Intl F4-2800C15-16GRKD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 28
读取速度，GB/s

15.3 14.1
写入速度，GB/s

9.8 10.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2646 2931

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

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Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

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Kingston 8ATF1G64AZ-2G3A1 8GB

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Samsung M3 78T2863EHS-CF7 1GB

Essencore Limited IM48GU88A30-FGGHMB 8GB

Essencore Limited IM48GU88A30-FGGHMB 8GB

Corsair CMTS16GM4800A40T2 16GB

Corsair CMTS16GM4800A40T2 16GB

G Skill Intl F5-6000U4040E16G 16GB

G Skill Intl F5-6000U4040E16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Corsair CMK16GX4M4C3200C15 4GB

Corsair CMK16GX4M4C3200C15 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3333C16-16GTZSK 16GB

G Skill Intl F4-3333C16-16GTZSK 16GB