Ramos Technology EWB8GB681CA3-16IC 8GB vs G Skill Intl F4-3300C16-16GTZSW 16GB

总分

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分

G Skill Intl F4-3300C16-16GTZSW 16GB

G Skill Intl F4-3300C16-16GTZSW 16GB

差异规格评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB

需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 14% 更低的延时
更快的读取速度，GB/s

15.3 13.7

测试中的平均数值

G Skill Intl F4-3300C16-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3300C16-16GTZSW 16GB

报告一个错误

更快的写入速度，GB/s

11.3 9.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramos Technology EWB8GB681CA3-16IC 8GB

G Skill Intl F4-3300C16-16GTZSW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 29
读取速度，GB/s

15.3 13.7
写入速度，GB/s

9.8 11.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2646 2967

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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SK Hynix HMA81GS6JJR8N-VK 8GB

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