Ramos Technology EWB8GB681CA3-16IC 8GB vs G Skill Intl F4-4133C19-8GTZRF 8GB

总分

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分

G Skill Intl F4-4133C19-8GTZRF 8GB

G Skill Intl F4-4133C19-8GTZRF 8GB

差异规格评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB

需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 32

左右 22% 更低的延时

G Skill Intl F4-4133C19-8GTZRF 8GB

需要考虑的原因
G Skill Intl F4-4133C19-8GTZRF 8GB

报告一个错误

更快的读取速度，GB/s

15.7 15.3

测试中的平均数值
更快的写入速度，GB/s

13.8 9.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramos Technology EWB8GB681CA3-16IC 8GB

G Skill Intl F4-4133C19-8GTZRF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 32
读取速度，GB/s

15.3 15.7
写入速度，GB/s

9.8 13.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2646 3098

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C17-16GTZR 16GB

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InnoDisk Corporation M4S0-4GSSNCSJ 4GB

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Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F4-2400C17-16GSXF 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Apacer Technology 78.DAGNN.4030B 16GB

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Kingston CAC24D4S7D8MB-16 16GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMK8GX4M2B3733C17 4GB

Corsair CMK8GX4M2B3733C17 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology CT32G48C40U5.M16A1 32GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Corsair CMK256GX4M8A2400C16 32GB

Corsair CMK256GX4M8A2400C16 32GB