Ramos Technology EWB8GB681CA3-16IC 8GB vs Kingston 9965604-008.D00G 16GB

总分

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分

Kingston 9965604-008.D00G 16GB

Kingston 9965604-008.D00G 16GB

差异规格评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB

需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 34

左右 26% 更低的延时
更快的读取速度，GB/s

15.3 10.7

测试中的平均数值
更快的写入速度，GB/s

9.8 7.2

测试中的平均数值

Kingston 9965604-008.D00G 16GB

需要考虑的原因
Kingston 9965604-008.D00G 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramos Technology EWB8GB681CA3-16IC 8GB

Kingston 9965604-008.D00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 34
读取速度，GB/s

15.3 10.7
写入速度，GB/s

9.8 7.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2646 2220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SF464128CKHIWDFSEG 4GB

Smart Modular SF464128CKHIWDFSEG 4GB

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Samsung M393B1K70QB0-CK0 8GB

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Micron Technology CT4G4DFS8213.8FA11 4GB

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Corsair CMRX8GD3000C16R4D 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-3000C16-8GISB 8GB