Ramos Technology EWB8GB681CA3-16IC 8GB vs Kingston KHX2133C14D4/4G 4GB

总分

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分

Kingston KHX2133C14D4/4G 4GB

Kingston KHX2133C14D4/4G 4GB

差异规格评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB

需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 24% 更低的延时

Kingston KHX2133C14D4/4G 4GB

需要考虑的原因
Kingston KHX2133C14D4/4G 4GB

报告一个错误

更快的读取速度，GB/s

15.9 15.3

测试中的平均数值
更快的写入速度，GB/s

11.7 9.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramos Technology EWB8GB681CA3-16IC 8GB

Kingston KHX2133C14D4/4G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 33
读取速度，GB/s

15.3 15.9
写入速度，GB/s

9.8 11.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2646 2727

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFD824A.C16FBD1 8GB

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Kingston KMKYF9-HYA 8GB

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Samsung M378A1G43DB0-CPB 8GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

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SK Hynix HMA82GR7AFR8N-UH 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMG32GX4M2D3600C18 16GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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Kingston 9905403-090.A01LF 4GB

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