Samsung M4 70T5663CZ3-CE6 2GB vs Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.9

测试中的平均数值

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 69

左右 -214% 更低的延时
更快的写入速度，GB/s

12.3 1,441.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 22
读取速度，GB/s

3,325.1 16.9
写入速度，GB/s

1,441.2 12.3
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

525 2708

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

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Kingston 9905403-500.A01LF 8GB

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Kingston 9965525-144.A00LF 8GB

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Crucial Technology CT8G4SFS6266.M4FB 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

SK Hynix HMA81GS6MFR8N-UH 8GB

SK Hynix HMA81GS6MFR8N-UH 8GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

Team Group Inc. DDR4 2666 8GB

Team Group Inc. DDR4 2666 8GB