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Ramos Technology EWB8GB681CA3-16IC 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
比较
Ramos Technology EWB8GB681CA3-16IC 8GB vs Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Ramos Technology EWB8GB681CA3-16IC 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
差异
规格
评论
差异
需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
51
左右 51% 更低的延时
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
15.3
测试中的平均数值
更快的写入速度,GB/s
11.8
9.8
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
Ramos Technology EWB8GB681CA3-16IC 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
51
读取速度,GB/s
15.3
15.6
写入速度,GB/s
9.8
11.8
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2646
2687
Ramos Technology EWB8GB681CA3-16IC 8GB RAM的比较
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair VS2GB1333D4 2GB
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Crucial Technology CT8G4DFD824A.M16FF 8GB
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Lexar Co Limited LD4AS008G-H2666GST 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
G Skill Intl F4-3200C15-16GTZ 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hypertec G2RT-4AFT00 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingston KHX2800C14D4/4GX 4GB
Kingston 99U5595-005.A00LF 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Kingston 9905403-090.A01LF 4GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
报告一个错误
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Bug description
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