Ramos Technology RMB4GB58BCA3-13HC 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB vs Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 23

左右 -5% 更低的延时
更快的读取速度，GB/s

17.3 11.6

测试中的平均数值
更快的写入速度，GB/s

13.7 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 22
读取速度，GB/s

11.6 17.3
写入速度，GB/s

5.6 13.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1751 3051

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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A-DATA Technology AD73I1B1672EG 2GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

SK Hynix HMA81GR7MFR8N-UH 8GB

SK Hynix HMA81GR7MFR8N-UH 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Samsung M386A8K40BM1-CRC 64GB

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Nanya Technology NT1GT64U88D0BY-AD 1GB

Kingston KTP9W1-MIE 16GB

Kingston KTP9W1-MIE 16GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

Corsair CMG32GX4M2E3200C16 16GB

Corsair CMG32GX4M2E3200C16 16GB