Ramos Technology RMB4GB58BCA3-13HC 4GB vs Corsair CMU32GX4M2D3200C16 16GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

Corsair CMU32GX4M2D3200C16 16GB

Corsair CMU32GX4M2D3200C16 16GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 30

左右 23% 更低的延时

Corsair CMU32GX4M2D3200C16 16GB

需要考虑的原因
Corsair CMU32GX4M2D3200C16 16GB

报告一个错误

更快的读取速度，GB/s

15 11.6

测试中的平均数值
更快的写入速度，GB/s

12.3 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

Corsair CMU32GX4M2D3200C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 30
读取速度，GB/s

11.6 15.0
写入速度，GB/s

5.6 12.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1751 2875

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin MR[ABC]4U320GJJM16G 16GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Crucial Technology CT8G4DFS832A.C8FE 8GB

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Kllisre M471A3243BB0-CP50 16GB

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Crucial Technology BLE8G4D34AEEAK.K8FB 8GB

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Kingston 9905403-444.A00LF 4GB

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SK Hynix HMAA4GU6AJR8N-VK 32GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Corsair CMK128GX4M4A2666C16 32GB

Corsair CMK128GX4M4A2666C16 32GB

Avant Technology F6451U64F9333G 4GB

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Smart Modular SMS4TDC8C1K0446FCG 8GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston KHX4000C19D4/8GX 8GB

Kingston KHX4000C19D4/8GX 8GB