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Samsung M393B1K70QB0-CK0 8GB
Kingston KV0M5R-HYD 8GB

Samsung M393B1K70QB0-CK0 8GB vs Kingston KV0M5R-HYD 8GB

总分
star star star star star
Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分
star star star star star
Kingston KV0M5R-HYD 8GB

Kingston KV0M5R-HYD 8GB

差异 规格 评论

差异

Samsung M393B1K70QB0-CK0 8GB 需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    47 left arrow 48
    左右 2% 更低的延时
Kingston KV0M5R-HYD 8GB 需要考虑的原因
Kingston KV0M5R-HYD 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.3 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70QB0-CK0 8GB
Kingston KV0M5R-HYD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 48
  • 读取速度，GB/s
    10.4 left arrow 13.3
  • 写入速度，GB/s
    7.8 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2169 left arrow 2398

Samsung M393B1K70QB0-CK0 8GB RAM的比较

V-Color Technology Inc. TD8G16C10-OC18AK 8GB
Kingston 9905430-400.A00LF 2GB

Kingston KV0M5R-HYD 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M393B1K70QB0-CK0 8GB
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内存RAM
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Team Group Inc. TEAMGROUP-UD4-4500 8GB
内存RAM
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内存RAM
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内存RAM
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Corsair CMK16GX4M2K4266C16 8GB
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Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
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Corsair CMT32GX4M4K3600C16 8GB
Corsair CMT32GX4M4K3600C16 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
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Crucial Technology CT4G4DFS824A.C8FDD2 4GB
内存RAM
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G Skill Intl F5-6400J3239G16G 16GB
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Kingmax Semiconductor GLLG42F-DA---------- 8GB
内存RAM
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Crucial Technology CT25664BA1339.M8FK 2GB
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内存RAM