Samsung M378B5673EH1-CF8 2GB vs Corsair CMT32GX4M4K3600C16 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Corsair CMT32GX4M4K3600C16 8GB

Corsair CMT32GX4M4K3600C16 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

Corsair CMT32GX4M4K3600C16 8GB

需要考虑的原因
Corsair CMT32GX4M4K3600C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 -8% 更低的延时
更快的读取速度，GB/s

21.5 12.7

测试中的平均数值
更快的写入速度，GB/s

17.2 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Corsair CMT32GX4M4K3600C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 26
读取速度，GB/s

12.7 21.5
写入速度，GB/s

7.5 17.2
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 4042

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273EB0-CK0 4GB

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Samsung M471A2K43DB1-CTD 16GB

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Kingston 99U5474-038.A00LF 4GB

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Kingston 99U5458-008.A00LF 4GB

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Kingston 9905743-043.A00G 16GB

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Samsung M471B5173QH0-YK0 4GB

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Kingston ACR512X64D3S13C9G 4GB

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Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

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Samsung M393B1G70BH0-CK0 8GB

SK Hynix HMA82GU6JJR8N-VK 16GB

SK Hynix HMA82GU6JJR8N-VK 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Corsair CM4X4GF2400Z16K4 4GB

Corsair CM4X4GF2400Z16K4 4GB

Samsung M378A1K43EB2-CWE 8GB

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SK Hynix MMA82GS6CJR8N-VK 16GB

SK Hynix MMA82GS6CJR8N-VK 16GB