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PNY Electronics PNY 2GB
SK Hynix HMA81GR7AFR8N-VK 8GB

PNY Electronics PNY 2GB vs SK Hynix HMA81GR7AFR8N-VK 8GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
SK Hynix HMA81GR7AFR8N-VK 8GB

SK Hynix HMA81GR7AFR8N-VK 8GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 49
    左右 45% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 8.8
    测试中的平均数值
SK Hynix HMA81GR7AFR8N-VK 8GB 需要考虑的原因
SK Hynix HMA81GR7AFR8N-VK 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
SK Hynix HMA81GR7AFR8N-VK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 49
  • 读取速度，GB/s
    13.8 left arrow 8.8
  • 写入速度，GB/s
    8.4 left arrow 8.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2331

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

SK Hynix HMA81GR7AFR8N-VK 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M393B5270CH0-CH9 4GB
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Kingmax Semiconductor KLDD48F-B8KU5 1GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Kingston 99U5471-020.A00LF 4GB
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SK Hynix DDR2 800 2G 2GB
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内存RAM
Samsung DDR3 8GB 1600MHz 8GB
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内存RAM
Corsair CMSX32GX4M2A3200C22 16GB
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Corsair CMV8GX4M1A2133C15 8GB
内存RAM
Kingston 9965669-018.A00G 16GB
Kingston 9965669-018.A00G 16GB
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Super Talent F21UB8GS 8GB
内存RAM