Ramos Technology RMB4GB58BCA3-13HC 4GB vs SK Hynix HMA82GS6CJR8N-XN 16GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

SK Hynix HMA82GS6CJR8N-XN 16GB

SK Hynix HMA82GS6CJR8N-XN 16GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 40

左右 43% 更低的延时

SK Hynix HMA82GS6CJR8N-XN 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-XN 16GB

报告一个错误

更快的读取速度，GB/s

14.8 11.6

测试中的平均数值
更快的写入速度，GB/s

11.2 5.6

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

SK Hynix HMA82GS6CJR8N-XN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 40
读取速度，GB/s

11.6 14.8
写入速度，GB/s

5.6 11.2
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1751 2709

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1G44AB0-CWE 8GB

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Crucial Technology BLE8G4D26AFEA.16FAD 8GB

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Crucial Technology BLS8G4D32AESTK.M8FE 8GB

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Kingston K1N7HK-ELC 2GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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G Skill Intl F4-2400C17-4GVR 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Apacer Technology D12.2324CS.001 8GB

Apacer Technology D12.2324CS.001 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMK16GX4M2B3600C18 8GB

Corsair CMK16GX4M2B3600C18 8GB