Samsung 1600 CL10 Series 8GB vs Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB

Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时

Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB

需要考虑的原因
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB

报告一个错误

更快的读取速度，GB/s

18.4 16.1

测试中的平均数值
更快的写入速度，GB/s

15.2 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

16.1 18.4
写入速度，GB/s

10.1 15.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 3625

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT102464BA160B.M16 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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G Skill Intl F4-4266C19-4GTZ 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Avant Technology J642GU42J9266N2 16GB

Avant Technology J642GU42J9266N2 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3600C19-8GSXF 8GB

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Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Essencore Limited 8GBF1X08QFHH38-135-K 8GB

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SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB