Samsung 1600 CL10 Series 8GB vs Corsair CMK16GX4M2K4266C19 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Corsair CMK16GX4M2K4266C19 8GB

Corsair CMK16GX4M2K4266C19 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

Corsair CMK16GX4M2K4266C19 8GB

需要考虑的原因
Corsair CMK16GX4M2K4266C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 25

左右 -47% 更低的延时
更快的读取速度，GB/s

20.9 16.1

测试中的平均数值
更快的写入速度，GB/s

18.1 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Corsair CMK16GX4M2K4266C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 17
读取速度，GB/s

16.1 20.9
写入速度，GB/s

10.1 18.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 3863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C16-16GFXR 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Corsair CMY8GX3M2A2666C10 4GB

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Essencore Limited IM48GU48N21-FFFHM 8GB

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Samsung M471A1G44AB0-CWE 8GB

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Samsung M471A1K43CB1-CRC 8GB