Samsung 1600 CL10 Series 8GB vs Corsair CMR32GX4M2A2666C16 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Corsair CMR32GX4M2A2666C16 16GB

Corsair CMR32GX4M2A2666C16 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 31% 更低的延时
更快的读取速度，GB/s

16.1 15.5

测试中的平均数值

Corsair CMR32GX4M2A2666C16 16GB

需要考虑的原因
Corsair CMR32GX4M2A2666C16 16GB

报告一个错误

更快的写入速度，GB/s

12.1 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Corsair CMR32GX4M2A2666C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 36
读取速度，GB/s

16.1 15.5
写入速度，GB/s

10.1 12.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 2970

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Panram International Corporation D4N2400PS-8G 8GB

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Crucial Technology CT8G4SFRA266.M8FRS 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Crucial Technology BLS16G4D240FSE.16FAD 16GB

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Kingston 9905403-174.A00LF 2GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

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Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Wilk Elektronik S.A. GY2666D464L16/8G 8GB

Wilk Elektronik S.A. GY2666D464L16/8G 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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G Skill Intl F4-3600C17-16GTZ 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston 9905702-121.A00G 8GB

Kingston 9905702-121.A00G 8GB