Samsung 1600 CL10 Series 8GB vs Corsair CMSX64GX4M4A2666C18 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Corsair CMSX64GX4M4A2666C18 16GB

Corsair CMSX64GX4M4A2666C18 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

Corsair CMSX64GX4M4A2666C18 16GB

需要考虑的原因
Corsair CMSX64GX4M4A2666C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 25

左右 -4% 更低的延时
更快的读取速度，GB/s

16.6 16.1

测试中的平均数值
更快的写入速度，GB/s

14.0 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Corsair CMSX64GX4M4A2666C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 24
读取速度，GB/s

16.1 16.6
写入速度，GB/s

10.1 14.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 3209

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Netac Technology Co Ltd EKBLACK4163216AD 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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