Samsung 1600 CL10 Series 8GB vs Corsair CMW16GX4M2A2666C16 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Corsair CMW16GX4M2A2666C16 8GB

Corsair CMW16GX4M2A2666C16 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时

Corsair CMW16GX4M2A2666C16 8GB

需要考虑的原因
Corsair CMW16GX4M2A2666C16 8GB

报告一个错误

更快的读取速度，GB/s

16.8 16.1

测试中的平均数值
更快的写入速度，GB/s

13.0 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Corsair CMW16GX4M2A2666C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

16.1 16.8
写入速度，GB/s

10.1 13.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 3254

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CMRX8GD3000C16R4D 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

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Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

G Skill Intl F4-2133C15-8GRB 8GB

G Skill Intl F4-2133C15-8GRB 8GB

Kingston 99P5471-016.A00LF 8GB

Kingston 99P5471-016.A00LF 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Kingston KHX3200C18D4/16G 16GB

Kingston KHX3200C18D4/16G 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CMT64GX4M8C3200C16 8GB

Corsair CMT64GX4M8C3200C16 8GB