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Samsung 1600 CL10 Series 8GB
Corsair CMW16GX4M2Z2933C16 8GB

Samsung 1600 CL10 Series 8GB vs Corsair CMW16GX4M2Z2933C16 8GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Corsair CMW16GX4M2Z2933C16 8GB

Corsair CMW16GX4M2Z2933C16 8GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 29
    左右 14% 更低的延时
Corsair CMW16GX4M2Z2933C16 8GB 需要考虑的原因
Corsair CMW16GX4M2Z2933C16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.4 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Corsair CMW16GX4M2Z2933C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 29
  • 读取速度，GB/s
    16.1 left arrow 17.4
  • 写入速度，GB/s
    10.1 left arrow 14.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3398

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Corsair CMW16GX4M2Z2933C16 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Essencore Limited KD48GS481-26N1600 8GB
Essencore Limited KD48GS481-26N1600 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMW16GX4M2Z2933C16 8GB
Corsair CMW16GX4M2Z2933C16 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Kllisre M471A1K43CB1-CTD 8GB
Kllisre M471A1K43CB1-CTD 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Essencore Limited KD4AGU88C-26N190A 16GB
Essencore Limited KD4AGU88C-26N190A 16GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
G Skill Intl F4-2133C15-4GNT 4GB
G Skill Intl F4-2133C15-4GNT 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Samsung M393A1G40EB1-CRC 8GB
Samsung M393A1G40EB1-CRC 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3000C14-8GTZ 8GB
G Skill Intl F4-3000C14-8GTZ 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
内存RAM
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
G Skill Intl F4-2400C15-8GRR 8GB
G Skill Intl F4-2400C15-8GRR 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
内存RAM