Samsung 1600 CL10 Series 8GB vs Crucial Technology BL16G30C15U4WL.M16FE 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Crucial Technology BL16G30C15U4WL.M16FE 16GB

Crucial Technology BL16G30C15U4WL.M16FE 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 7% 更低的延时

Crucial Technology BL16G30C15U4WL.M16FE 16GB

需要考虑的原因
Crucial Technology BL16G30C15U4WL.M16FE 16GB

报告一个错误

更快的读取速度，GB/s

18.5 16.1

测试中的平均数值
更快的写入速度，GB/s

15.3 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Crucial Technology BL16G30C15U4WL.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 27
读取速度，GB/s

16.1 18.5
写入速度，GB/s

10.1 15.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 3731

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Panram International Corporation D4U2666P-8G 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Kingston 9905702-137.A00G 8GB

Kingston 9905702-137.A00G 8GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Samsung M471A5244CB0-CRC 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Samsung M393A2K43CB1-CRC 16GB