Samsung 1600 CL10 Series 8GB vs Crucial Technology CT8G4SFS824A.M8FE 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Crucial Technology CT8G4SFS824A.M8FE 8GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 39

左右 36% 更低的延时
更快的读取速度，GB/s

16.1 13.4

测试中的平均数值

Crucial Technology CT8G4SFS824A.M8FE 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.M8FE 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 39
读取速度，GB/s

16.1 13.4
写入速度，GB/s

10.1 10.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2764 2333

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA82GS6AFRFR-UH 16GB

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Corsair CM4X4GF3000C15K4 4GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Crucial Technology BLS4G4D240FSA.M8F 4GB

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Micron Technology 16ATF2G64AZ-2G3E1 16GB

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G Skill Intl F4-3200C16-8GVKBN 8GB

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Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

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Patriot Memory (PDP Systems) PSD44G213341 4GB

Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

Kingston 99U5474-022.A00LF 2GB

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Samsung M393A2G40EB1-CPB 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Essencore Limited KD4AGU880-34A170X 16GB