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Samsung 1600 CL10 Series 8GB
Essencore Limited IM44GU48A30-FGGHAB 4GB

Samsung 1600 CL10 Series 8GB vs Essencore Limited IM44GU48A30-FGGHAB 4GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Essencore Limited IM44GU48A30-FGGHAB 4GB

Essencore Limited IM44GU48A30-FGGHAB 4GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 65
    左右 62% 更低的延时
  • 更快的写入速度，GB/s
    10.1 left arrow 8.7
    测试中的平均数值
Essencore Limited IM44GU48A30-FGGHAB 4GB 需要考虑的原因
Essencore Limited IM44GU48A30-FGGHAB 4GB
报告一个错误
  • 更快的读取速度，GB/s
    17 left arrow 16.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 65
  • 读取速度，GB/s
    16.1 left arrow 17.0
  • 写入速度，GB/s
    10.1 left arrow 8.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 1875

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Essencore Limited IM44GU48A30-FGGHAB 4GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F4-2666C15-4GVK 4GB
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内存RAM
Kingston 9905403-515.A00LF 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
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Corsair CMW32GX4M2E3200C16 16GB
内存RAM
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内存RAM
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Kingston 9905624-022.A00G 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
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Kingston KHX3466C16D4/16GX 16GB
内存RAM