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Samsung 1600 CL10 Series 8GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB

Samsung 1600 CL10 Series 8GB vs ISD Technology Limited IM44GU48A30-GIIHM 4GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
ISD Technology Limited IM44GU48A30-GIIHM 4GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 9.3
    测试中的平均数值
ISD Technology Limited IM44GU48A30-GIIHM 4GB 需要考虑的原因
ISD Technology Limited IM44GU48A30-GIIHM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 25
    左右 -9% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 23
  • 读取速度，GB/s
    16.1 left arrow 14.9
  • 写入速度，GB/s
    10.1 left arrow 9.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2318

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMK32GX4M4B3200C14 8GB
Corsair CMK32GX4M4B3200C14 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C16-16GTZA 16GB
G Skill Intl F4-3200C16-16GTZA 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965684-005.A00G 8GB
Kingston 9965684-005.A00G 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston HP24D4U7S8MBP-4 4GB
Kingston HP24D4U7S8MBP-4 4GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT8G4SFS824A.M8FA 8GB
Crucial Technology CT8G4SFS824A.M8FA 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Corsair CMW32GX4M2E3200C16 16GB
Corsair CMW32GX4M2E3200C16 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK128GX4M4D3600C18 32GB
Corsair CMK128GX4M4D3600C18 32GB
内存RAM
Kingston ACR512X64D3S16C11G 4GB
Kingston ACR512X64D3S16C11G 4GB
Corsair CM4B8G1L2666A18S4 8GB
Corsair CM4B8G1L2666A18S4 8GB
内存RAM
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2133 2OZ 8GB
A-DATA Technology DDR4 2133 2OZ 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3000C15-8GRR 8GB
G Skill Intl F4-3000C15-8GRR 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3200C16-8GFX 8GB
G Skill Intl F4-3200C16-8GFX 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
V-GEN D4H8GL26A8TS6 8GB
V-GEN D4H8GL26A8TS6 8GB
内存RAM