Samsung 1600 CL10 Series 8GB vs Kingston KHYXPX-HYJ 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Kingston KHYXPX-HYJ 8GB

Kingston KHYXPX-HYJ 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 31% 更低的延时
更快的读取速度，GB/s

16.1 13.6

测试中的平均数值
更快的写入速度，GB/s

10.1 7.1

测试中的平均数值

Kingston KHYXPX-HYJ 8GB

需要考虑的原因
Kingston KHYXPX-HYJ 8GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Kingston KHYXPX-HYJ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 36
读取速度，GB/s

16.1 13.6
写入速度，GB/s

10.1 7.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 2055

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AD73I1C1674EV 4GB

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Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

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Kingston 9905471-071.A00LF 8GB

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Micron Technology 16A6A2G64HZ-2-2E1 16GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Kingston MSISID4S9S8ME-8 8GB

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Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Kingston KF3200C16D4/8GX 8GB

Kingston KF3200C16D4/8GX 8GB