Samsung 1600 CL10 Series 8GB vs Kingston LV36D4U1S8HD-8XR 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Kingston LV36D4U1S8HD-8XR 8GB

Kingston LV36D4U1S8HD-8XR 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 37

左右 32% 更低的延时

Kingston LV36D4U1S8HD-8XR 8GB

需要考虑的原因
Kingston LV36D4U1S8HD-8XR 8GB

报告一个错误

更快的读取速度，GB/s

21.6 16.1

测试中的平均数值
更快的写入速度，GB/s

15.0 10.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Kingston LV36D4U1S8HD-8XR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 37
读取速度，GB/s

16.1 21.6
写入速度，GB/s

10.1 15.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2764 3581

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung 1600 CL10 Series 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Heoriady M378A1K43BB2-CTD 8GB

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Mushkin MR[ABC]4U360JNNM8G 8GB

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Samsung M386B4G70DM0-CMA4 32GB

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Kingston 99U5474-028.A00LF 4GB

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Corsair CMSX16GX4M2A2666C18 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingston KHX2400C15D4/4G 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMA851U6DJR6N-WM 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Mushkin MR[A/B]4U280HHHH8G 8GB

Mushkin MR[A/B]4U280HHHH8G 8GB