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Samsung 1600 CL10 Series 8GB
Samsung M393A1G43EB1-CRC 8GB

Samsung 1600 CL10 Series 8GB vs Samsung M393A1G43EB1-CRC 8GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Samsung M393A1G43EB1-CRC 8GB

Samsung M393A1G43EB1-CRC 8GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 49
    左右 49% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 8.3
    测试中的平均数值
Samsung M393A1G43EB1-CRC 8GB 需要考虑的原因
Samsung M393A1G43EB1-CRC 8GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Samsung M393A1G43EB1-CRC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 49
  • 读取速度，GB/s
    16.1 left arrow 10.9
  • 写入速度，GB/s
    10.1 left arrow 8.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2413

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Samsung M393A1G43EB1-CRC 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Apacer Technology 78.C2GFK.AR20B 8GB
Apacer Technology 78.C2GFK.AR20B 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Samsung M393A1G43EB1-CRC 8GB
Samsung M393A1G43EB1-CRC 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Kingston X6TCK6-MIE 32GB
Kingston X6TCK6-MIE 32GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
SK Hynix HMA82GR7JJR8N-VK 16GB
SK Hynix HMA82GR7JJR8N-VK 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston KHX4000C19D4/8GX 8GB
Kingston KHX4000C19D4/8GX 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Kingston 9905678-065.A00G 8GB
Kingston 9905678-065.A00G 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
G Skill Intl F4-3000C15-4GVR 4GB
G Skill Intl F4-3000C15-4GVR 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Gloway International (HK) STK2400C15-16GB 16GB
Gloway International (HK) STK2400C15-16GB 16GB
内存RAM
Kingston KF3600C18D4/16GX 16GB
Kingston KF3600C18D4/16GX 16GB
Kingston KF556C40-16 16GB
Kingston KF556C40-16 16GB
内存RAM