Samsung 1600 CL10 Series 8GB vs Samsung M471A5244CB0-CRC 4GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 37

左右 32% 更低的延时
更快的读取速度，GB/s

16.1 14.4

测试中的平均数值

Samsung M471A5244CB0-CRC 4GB

需要考虑的原因
Samsung M471A5244CB0-CRC 4GB

报告一个错误

更快的写入速度，GB/s

10.4 10.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Samsung M471A5244CB0-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 37
读取速度，GB/s

16.1 14.4
写入速度，GB/s

10.1 10.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2764 2179

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Micron Technology 8ATF51264AZ-2G1A2 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston 99U5469-045.A00LF 4GB

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Crucial Technology CT8G4DFS824A.C8FAD1 8GB

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Team Group Inc. Team-Elite-1333 4GB

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Corsair CMSX16GX4M2A2666C18 8GB

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G Skill Intl F4-3600C18-16GTRS 16GB

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Crucial Technology BLS16G4D240FSB.16FD 16GB

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A-DATA Technology AO1P32NCSV1-BEWS 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

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UMAX Technology D4-2133-4GB-512X8-L 4GB

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G Skill Intl F4-5333C22-8GTRG 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

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Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB