Samsung 1600 CL10 Series 8GB vs SK Hynix HMA82GR7AFR4N-TF 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

SK Hynix HMA82GR7AFR4N-TF 16GB

SK Hynix HMA82GR7AFR4N-TF 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 66

左右 62% 更低的延时
更快的读取速度，GB/s

16.1 7.9

测试中的平均数值
更快的写入速度，GB/s

10.1 7.0

测试中的平均数值

SK Hynix HMA82GR7AFR4N-TF 16GB

需要考虑的原因
SK Hynix HMA82GR7AFR4N-TF 16GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

SK Hynix HMA82GR7AFR4N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 66
读取速度，GB/s

16.1 7.9
写入速度，GB/s

10.1 7.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 1862

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

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Samsung M471A1G44AB0-CWE 8GB

Corsair CMK32GX5M2A4800C40 16GB

Corsair CMK32GX5M2A4800C40 16GB

Kingston 9905403-090.A01LF 4GB

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Kingston 9905700-072.A01G 16GB

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Kingston 9905403-156.A00LF 2GB

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G Skill Intl F4-3600C18-8GTRG 8GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

G Skill Intl F4-3600C18-16GTRS 16GB

G Skill Intl F4-3600C18-16GTRS 16GB