Samsung 1600 CL10 Series 8GB vs Transcend Information AQD-SD4U16GN21-SE 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Transcend Information AQD-SD4U16GN21-SE 16GB

Transcend Information AQD-SD4U16GN21-SE 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 7% 更低的延时
更快的读取速度，GB/s

16.1 13.5

测试中的平均数值

Transcend Information AQD-SD4U16GN21-SE 16GB

需要考虑的原因
Transcend Information AQD-SD4U16GN21-SE 16GB

报告一个错误

更快的写入速度，GB/s

11.9 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Transcend Information AQD-SD4U16GN21-SE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 27
读取速度，GB/s

16.1 13.5
写入速度，GB/s

10.1 11.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 2511

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP125U64CP8-S6 2GB

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Crucial Technology CT8G4SFS824A.M8FJ 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Crucial Technology CT8G4DFS8266.M8FE 8GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Transcend Information TS2GLH64V4B 16GB

Transcend Information TS2GLH64V4B 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Essencore Limited KD48GU880-32A160U 8GB

Essencore Limited KD48GU880-32A160U 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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G Skill Intl F4-3200C16-8GTZKW 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Kingston 9965589-037.D00G 8GB