Samsung DDR3 8GB 1600MHz 8GB vs A-DATA Technology DDR4 2800 2OZ 4GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

A-DATA Technology DDR4 2800 2OZ 4GB

A-DATA Technology DDR4 2800 2OZ 4GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

A-DATA Technology DDR4 2800 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR4 2800 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 43

左右 -30% 更低的延时
更快的读取速度，GB/s

16.2 14.9

测试中的平均数值
更快的写入速度，GB/s

12.2 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

A-DATA Technology DDR4 2800 2OZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 33
读取速度，GB/s

14.9 16.2
写入速度，GB/s

9.6 12.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 3026

RAM Latency Calculator

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RAM 2

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最新比较

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AMD R5316G1609U2K 8GB

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A-DATA Technology DDR4 2800 2OZ 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9905702-120.A00G 8GB

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Kingston ACR16D3LS1KBG/8G 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB

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Samsung M391B5673EH1-CH9 2GB

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Corsair CMD32GX4M2B2800C14 16GB

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Kingston 9905403-444.A00LF 4GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

Crucial Technology CT4G4DFS8266.M8FF 4GB