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Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905702-120.A00G 8GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Kingston 9905702-120.A00G 8GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Kingston 9905702-120.A00G 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
16.1
测试中的平均数值
更快的写入速度,GB/s
2,622.0
13.4
测试中的平均数值
需要考虑的原因
Kingston 9905702-120.A00G 8GB
报告一个错误
低于PassMark测试中的延时,ns
30
77
左右 -157% 更低的延时
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905702-120.A00G 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
30
读取速度,GB/s
3,405.2
16.1
写入速度,GB/s
2,622.0
13.4
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
763
3199
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Kingston 9905702-120.A00G 8GB RAM的比较
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5273CH0-CH9 4GB
Samsung M378A1K43DB2-CTD 8GB
Samsung M378A1K43EB2-CWE 8GB
Avant Technology W642GU42J5213N 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Corsair CMK128GX4M8Z2933C16 16GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Kingston 9905664-010.A00G 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston ACR26D4S9S1KA-4 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M393A1K43BB1-CTD 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
G Skill Intl F4-3200C14-16GTZN 16GB
Apacer Technology 75.A73AA.G03 2GB
Teikon TMA851S6AFR6N-UHHC 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
TwinMOS 9DNPBNZB-TATP 4GB
G Skill Intl F4-3200C16-8GTZKW 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology 16G4UD2400.C16BD1 16GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
报告一个错误
×
Bug description
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