Samsung DDR3 8GB 1600MHz 8GB vs Corsair CM4B8G1J2400A16K2-ON 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Corsair CM4B8G1J2400A16K2-ON 8GB

Corsair CM4B8G1J2400A16K2-ON 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Corsair CM4B8G1J2400A16K2-ON 8GB

需要考虑的原因
Corsair CM4B8G1J2400A16K2-ON 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 43

左右 -65% 更低的延时
更快的读取速度，GB/s

18.3 14.9

测试中的平均数值
更快的写入速度，GB/s

12.9 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Corsair CM4B8G1J2400A16K2-ON 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 26
读取速度，GB/s

14.9 18.3
写入速度，GB/s

9.6 12.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 3312

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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SK Hynix HYMP512U64CP8-Y5 1GB

Avant Technology W6451U67J7240NB 4GB

Avant Technology W6451U67J7240NB 4GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

AMD AE34G1601U1 4GB

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TwinMOS 9DNPBNZB-TATP 4GB

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Crucial Technology CT4G4SFS824A.C8FBR2 4GB