Samsung DDR3 8GB 1600MHz 8GB vs Corsair CMT32GX4M4Z3200C16 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Corsair CMT32GX4M4Z3200C16 8GB

Corsair CMT32GX4M4Z3200C16 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Corsair CMT32GX4M4Z3200C16 8GB

需要考虑的原因
Corsair CMT32GX4M4Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 43

左右 -59% 更低的延时
更快的读取速度，GB/s

18.5 14.9

测试中的平均数值
更快的写入速度，GB/s

16.0 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMT32GX4M4Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 27
读取速度，GB/s

14.9 18.5
写入速度，GB/s

9.6 16.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 3873

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Apacer Technology 78.DAGRL.4050C 16GB

Apacer Technology 78.DAGRL.4050C 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Apacer Technology 78.CAGQE.C750B 8GB

Apacer Technology 78.CAGQE.C750B 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Kingston RB24D4U7S8MB-8 8GB

Kingston RB24D4U7S8MB-8 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

G Skill Intl F4-3733C17-16GTZR 16GB

G Skill Intl F4-3733C17-16GTZR 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMT32GX4M4Z3200C16 8GB

Corsair CMT32GX4M4Z3200C16 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Transcend Information TS1GLH64V1H 8GB

Transcend Information TS1GLH64V1H 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Hewlett-Packard 7EH64AA#ABC 8GB

Hewlett-Packard 7EH64AA#ABC 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Corsair CMD64GX4M8A2800C16 8GB

Corsair CMD64GX4M8A2800C16 8GB

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

Corsair CMK16GX4M2Z3600C14 8GB

Corsair CMK16GX4M2Z3600C14 8GB