Samsung DDR3 8GB 1600MHz 8GB vs Corsair CMU32GX4M4C3466C16 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Corsair CMU32GX4M4C3466C16 8GB

Corsair CMU32GX4M4C3466C16 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Corsair CMU32GX4M4C3466C16 8GB

需要考虑的原因
Corsair CMU32GX4M4C3466C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 43

左右 -16% 更低的延时
更快的读取速度，GB/s

15.5 14.9

测试中的平均数值
更快的写入速度，GB/s

12.6 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMU32GX4M4C3466C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 37
读取速度，GB/s

14.9 15.5
写入速度，GB/s

9.6 12.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 2962

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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UMAX Technology D4-2133-4GB-512X8-L 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Kingston KST-2133MHZ-4G 4GB

Kingston KST-2133MHZ-4G 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

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Kingston 99U5584-004.A00LF 4GB

Kingston KY7N41-MID 8GB

Kingston KY7N41-MID 8GB