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Kingston ACR16D3LS1KNG/8G 8GB
Neo Forza NMUD480E82-2666 8GB

Kingston ACR16D3LS1KNG/8G 8GB vs Neo Forza NMUD480E82-2666 8GB

总分
star star star star star
Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

总分
star star star star star
Neo Forza NMUD480E82-2666 8GB

Neo Forza NMUD480E82-2666 8GB

差异 规格 评论

差异

Kingston ACR16D3LS1KNG/8G 8GB 需要考虑的原因
Kingston ACR16D3LS1KNG/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 31
    左右 10% 更低的延时
Neo Forza NMUD480E82-2666 8GB 需要考虑的原因
Neo Forza NMUD480E82-2666 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston ACR16D3LS1KNG/8G 8GB
Neo Forza NMUD480E82-2666 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 31
  • 读取速度，GB/s
    9.7 left arrow 16.8
  • 写入速度，GB/s
    5.2 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1731 left arrow 3239

Kingston ACR16D3LS1KNG/8G 8GB RAM的比较

Wilk Elektronik S.A. GR1600S3V64L11/8G 8GB
Kingston KGTWW1-MIE 4GB

Neo Forza NMUD480E82-2666 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C16-8GTZKK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston ACR16D3LS1KNG/8G 8GB
Kingston ACR16D3LS1KNG/8G 8GB
Neo Forza NMUD480E82-2666 8GB
Neo Forza NMUD480E82-2666 8GB
内存RAM
PNY Electronics PNY 2GB
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内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
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内存RAM
Samsung M378B5673EH1-CF8 2GB
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内存RAM
SK Hynix DDR2 800 2G 2GB
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内存RAM
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TwinMOS 8DPT5MK8-TATP 2GB
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Micron Technology 16ATF1G64AZ-2G1B1 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
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内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT4G4SFS8213.C8FHP 4GB
Crucial Technology CT4G4SFS8213.C8FHP 4GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-4400C19-8GTZKK 8GB
G Skill Intl F4-4400C19-8GTZKK 8GB
内存RAM
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SK Hynix HYMP164U64CP6-Y5 512MB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
内存RAM