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Kingston 9905403-061.A00LF 2GB
Kingston KHX3333C17D4/4GX 4GB

Kingston 9905403-061.A00LF 2GB vs Kingston KHX3333C17D4/4GX 4GB

总分
star star star star star
Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分
star star star star star
Kingston KHX3333C17D4/4GX 4GB

Kingston KHX3333C17D4/4GX 4GB

差异 规格 评论

差异

Kingston 9905403-061.A00LF 2GB 需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
Kingston KHX3333C17D4/4GX 4GB 需要考虑的原因
Kingston KHX3333C17D4/4GX 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 57
    左右 -104% 更低的延时
  • 更快的读取速度，GB/s
    12 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.9 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
Kingston KHX3333C17D4/4GX 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    57 left arrow 28
  • 读取速度，GB/s
    6.8 left arrow 12.0
  • 写入速度，GB/s
    5.5 left arrow 9.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1244 left arrow 2537

Kingston 9905403-061.A00LF 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB

Kingston KHX3333C17D4/4GX 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology BLT8G4D30AETA.K16FE 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Kingston KHX3333C17D4/4GX 4GB
Kingston KHX3333C17D4/4GX 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
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Kingston X2YH1K-MIE-NX 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Avant Technology W641GU42J5213N3 8GB
Avant Technology W641GU42J5213N3 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology BLS16G4D240FSC.16FBD 16GB
Crucial Technology BLS16G4D240FSC.16FBD 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
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Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
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Corsair CMV4GX4M1A2666C18 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMD32GX4M4C3200C14T 8GB
Corsair CMD32GX4M4C3200C14T 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMK8GX4M2B3000C15 4GB
Corsair CMK8GX4M2B3000C15 4GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43DB1-CTD 16GB
内存RAM
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Kingston 99U5471-056.A00LF 8GB
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Patriot Memory (PDP Systems) 2400 C15 Series 4GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
内存RAM