Samsung DDR3 8GB 1600MHz 8GB vs Corsair CMU64GX4M4C3200C16 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Corsair CMU64GX4M4C3200C16 16GB

Corsair CMU64GX4M4C3200C16 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Corsair CMU64GX4M4C3200C16 16GB

需要考虑的原因
Corsair CMU64GX4M4C3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 43

左右 -16% 更低的延时
更快的读取速度，GB/s

15.1 14.9

测试中的平均数值
更快的写入速度，GB/s

12.9 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMU64GX4M4C3200C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 37
读取速度，GB/s

14.9 15.1
写入速度，GB/s

9.6 12.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 3121

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M471B5173QH0-YK0 4GB

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Samsung M378A1K43BB2-CTD 8GB

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Kingston 99U5458-001.A00LF 2GB

Kingston 99U5458-001.A00LF 2GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

SK Hynix HMA82GS6DJR8N-WM 16GB

SK Hynix HMA82GS6DJR8N-WM 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston 99U5663-001.A00G 16GB

Kingston 99U5663-001.A00G 16GB