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Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB

Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology BL16G36C16U4W.M8FB1 16GB

总分
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分
star star star star star
Crucial Technology BL16G36C16U4W.M8FB1 16GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

差异 规格 评论

差异

Samsung DDR3 8GB 1600MHz 8GB 需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB
报告一个错误
Crucial Technology BL16G36C16U4W.M8FB1 16GB 需要考虑的原因
Crucial Technology BL16G36C16U4W.M8FB1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 43
    左右 -65% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 26
  • 读取速度，GB/s
    14.9 left arrow 19.4
  • 写入速度，GB/s
    9.6 left arrow 15.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2506 left arrow 3783

Samsung DDR3 8GB 1600MHz 8GB RAM的比较

A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DDR2 800G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
A-DATA Technology DDR4 2133 2OZ 8GB
A-DATA Technology DDR4 2133 2OZ 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
Golden Empire CL19-19-19 D4-2666 4GB
Golden Empire CL19-19-19 D4-2666 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMW32GX4M4D3600C16 8GB
Corsair CMW32GX4M4D3600C16 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Samsung M378A5143TB2-CTD 4GB
Samsung M378A5143TB2-CTD 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43DB1-CTD 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-4000C18-8GTZ 8GB
G Skill Intl F4-4000C18-8GTZ 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA81GU7CJR8N-VK 8GB
SK Hynix HMA81GU7CJR8N-VK 8GB
内存RAM
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
G Skill Intl F4-3200C16-16GTZSK 16GB
G Skill Intl F4-3200C16-16GTZSK 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston RB24D4U7S8MB-8 8GB
Kingston RB24D4U7S8MB-8 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Corsair CMK8GX4M1Z3200C16 8GB
Corsair CMK8GX4M1Z3200C16 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M393A2K43DB3-CWE 16GB
内存RAM