Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology BLE8G4D26AFEA.16FBD 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

需要考虑的原因
Crucial Technology BLE8G4D26AFEA.16FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 43

左右 -30% 更低的延时
更快的读取速度，GB/s

16.6 14.9

测试中的平均数值
更快的写入速度，GB/s

13.3 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 33
读取速度，GB/s

14.9 16.6
写入速度，GB/s

9.6 13.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 3141

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G26C16U4R.8FD 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Corsair CMSX4GX3M1A1600C9 4GB

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SK Hynix HYMP125U64CP8-S6 2GB

G Skill Intl F4-3000C15-4GTZB 4GB

G Skill Intl F4-3000C15-4GTZB 4GB

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A-DATA Technology DQVE1908 512MB

G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F4-2666C19-16GIS 16GB

Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

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Crucial Technology BLS8G4D240FSB.16FBD 8GB

TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology CB8GS2400.C8JT 8GB

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A-DATA Technology AX4S2800316G18-B 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology CT16G4SFD824A.M16FB 16GB