Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology BLS8G4D240FSA.16FAD 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的读取速度，GB/s

14.9 13.6

测试中的平均数值

Crucial Technology BLS8G4D240FSA.16FAD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSA.16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 43

左右 -19% 更低的延时
更快的写入速度，GB/s

10.8 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 36
读取速度，GB/s

14.9 13.6
写入速度，GB/s

9.6 10.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 2690

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Golden Empire CL17-17-17 D4-2400 16GB

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G Skill Intl F4-3600C19-8GTZRB 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Micron Technology 4ATF51264AZ-2G3E1 4GB

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Kingston KVR800D2N6/2G 2GB

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Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

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Crucial Technology BLS8G4D240FSBK.8FBD 8GB

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AMD AE34G1601U1 4GB

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Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

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G Skill Intl F4-4000C18-8GTZ 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Kingston 9965589-008.D02G 8GB

Kingston 9965589-008.D02G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Team Group Inc. TEAMGROUP-UD4-4133 8GB

Team Group Inc. TEAMGROUP-UD4-4133 8GB

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Corsair CM2X1024-8500C5D 1GB

Corsair CMW32GX4M4D3600C16 8GB

Corsair CMW32GX4M4D3600C16 8GB