Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology CT8G4SFS8213.M8FB 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology CT8G4SFS8213.M8FB 8GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的读取速度，GB/s

14.9 14

测试中的平均数值

Crucial Technology CT8G4SFS8213.M8FB 8GB

需要考虑的原因
Crucial Technology CT8G4SFS8213.M8FB 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 43

左右 -26% 更低的延时
更快的写入速度，GB/s

10.4 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 34
读取速度，GB/s

14.9 14.0
写入速度，GB/s

9.6 10.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 2616

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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V-GEN D4H8GL32A8TS 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston 9905678-105.A00G 8GB

Kingston 9905678-105.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.CAGN4.4020B 8GB

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Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Corsair CMD8GX4M2B3466C18 4GB

Corsair CMD8GX4M2B3466C18 4GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

G Skill Intl F4-4400C19-8GTZSW 8GB

G Skill Intl F4-4400C19-8GTZSW 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Corsair CMD16GX4M4B2400C10 4GB

Corsair CMD16GX4M4B2400C10 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

G Skill Intl F4-3733C17-8GTZA 8GB

G Skill Intl F4-3733C17-8GTZA 8GB

G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4DFD824A.C16FE 8GB

Crucial Technology CT8G4DFD824A.C16FE 8GB