Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology CT8G4SFS824A.C8FDD1 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FDD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 43

左右 -26% 更低的延时
更快的读取速度，GB/s

15 14.9

测试中的平均数值
更快的写入速度，GB/s

10.8 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 34
读取速度，GB/s

14.9 15.0
写入速度，GB/s

9.6 10.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 2516

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

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G Skill Intl F4-2666C18-8GTZR 8GB

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SK Hynix HMA81GS6CJR8N-VK 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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G Skill Intl F4-4400C18-8GTRG 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Corsair CMK32GX4M2Z4000C18 16GB

Corsair CMK32GX4M2Z4000C18 16GB

Crucial Technology CT25664AA800.M16FM 2GB

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G Skill Intl F4-3200C16-32GVK 32GB

G Skill Intl F4-3200C16-32GVK 32GB

Crucial Technology CT51264BD1339.M16F 4GB

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G Skill Intl F4-3000C16-8GVRB 8GB

G Skill Intl F4-3000C16-8GVRB 8GB

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Kingston 9905700-047.A00G 16GB

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Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

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Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266