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Samsung M378A1K43CB2-CTD 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB

Samsung M378A1K43CB2-CTD 8GB vs SK Hynix HMA81GS6CJR8N-VK 8GB

总分
star star star star star
Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

总分
star star star star star
SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

差异 规格 评论

差异

Samsung M378A1K43CB2-CTD 8GB 需要考虑的原因
Samsung M378A1K43CB2-CTD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 35
    左右 9% 更低的延时
  • 更快的读取速度，GB/s
    15.9 left arrow 15.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 11.3
    测试中的平均数值
SK Hynix HMA81GS6CJR8N-VK 8GB 需要考虑的原因
SK Hynix HMA81GS6CJR8N-VK 8GB
报告一个错误

规格

完整的技术规格清单
Samsung M378A1K43CB2-CTD 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    32 left arrow 35
  • 读取速度，GB/s
    15.9 left arrow 15.1
  • 写入速度，GB/s
    12.0 left arrow 11.3
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2952 left arrow 2631

Samsung M378A1K43CB2-CTD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A5143EB1-CPB 4GB

SK Hynix HMA81GS6CJR8N-VK 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hypertec G2RT-4AFT00 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Kingston 9905702-029.A00G 8GB
Kingston 9905702-029.A00G 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
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Apacer Technology 78.B1GM3.C7W0B 4GB
内存RAM
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Corsair CMG32GX4M2D3600C18 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMT32GX4M2E3200C16 16GB
Corsair CMT32GX4M2E3200C16 16GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Apacer Technology GD2.0918CT.001 4GB
Apacer Technology GD2.0918CT.001 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C15-16GTZR 16GB
G Skill Intl F4-2400C15-16GTZR 16GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Kingston MSI24D4U7S8MH-8 8GB
Kingston MSI24D4U7S8MH-8 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
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Corsair CMK16GX4M4C3200C15 4GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-2400C15-8GFXR 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
内存RAM