Samsung DDR3 8GB 1600MHz 8GB vs Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 43

左右 -10% 更低的延时
更快的读取速度，GB/s

15.7 14.9

测试中的平均数值
更快的写入速度，GB/s

11.1 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 39
读取速度，GB/s

14.9 15.7
写入速度，GB/s

9.6 11.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 2725

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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CAS Latency (CL) *

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RAM 2

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Frequency (Mhz) *

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Essencore Limited KD44GU481-26N1600 4GB

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Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

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Mushkin MR[ABC]4U266GHHF8G 8GB

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PNY Electronics PNY 2GB

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Corsair CMR16GX4M2C3000C15 8GB

Corsair CMR16GX4M2C3000C15 8GB