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Samsung DDR3 8GB 1600MHz 8GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

Samsung DDR3 8GB 1600MHz 8GB vs Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

总分
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分
star star star star star
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

差异 规格 评论

差异

Samsung DDR3 8GB 1600MHz 8GB 需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB
报告一个错误
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB 需要考虑的原因
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 43
    左右 -48% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.7 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung DDR3 8GB 1600MHz 8GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 29
  • 读取速度，GB/s
    14.9 left arrow 17.2
  • 写入速度，GB/s
    9.6 left arrow 15.7
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2506 left arrow 3546

Samsung DDR3 8GB 1600MHz 8GB RAM的比较

A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB

Gold Key Technology Co Ltd GKE160SO102408-3200 16GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMK16GX4M2B3333C16 8GB
Corsair CMK16GX4M2B3333C16 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 16G2666CL19 16GB
Micron Technology 16G2666CL19 16GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Kingston 9965662-010.A00G 16GB
Kingston 9965662-010.A00G 16GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
G Skill Intl F4-3200C15-8GTZKY 8GB
G Skill Intl F4-3200C15-8GTZKY 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Corsair CMU32GX4M2C3200C16 16GB
Corsair CMU32GX4M2C3200C16 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2G40DB1-CRC 16GB
Samsung M393A2G40DB1-CRC 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3333C16-16GTZSK 16GB
G Skill Intl F4-3333C16-16GTZSK 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Corsair CMK128GX4M8Z2933C16 16GB
Corsair CMK128GX4M8Z2933C16 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G16002S 8GB
Patriot Memory (PDP Systems) PSD38G16002S 8GB
AMD R538G1601S2LS 8GB
AMD R538G1601S2LS 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Corsair CMR16GX4M2K4266C19 8GB
Corsair CMR16GX4M2K4266C19 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
内存RAM