Samsung DDR3 8GB 1600MHz 8GB vs Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 48

左右 10% 更低的延时

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

报告一个错误

更快的读取速度，GB/s

16.8 14.9

测试中的平均数值
更快的写入速度，GB/s

15.7 9.6

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 48
读取速度，GB/s

14.9 16.8
写入速度，GB/s

9.6 15.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2506 3047

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5273DH0-CH9 4GB

Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMH16GX4M2D3600C18 8GB

Corsair CMH16GX4M2D3600C18 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CM4X4GF3000C15K4 4GB

Corsair CM4X4GF3000C15K4 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

A-DATA Technology AO1P24HC4N2-BWCS 4GB

A-DATA Technology AO1P24HC4N2-BWCS 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix 8GB36-H9 8GB

SK Hynix 8GB36-H9 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F4-2400C17-4GIS 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Transcend Information JM2666HLE-16G 16GB

Transcend Information JM2666HLE-16G 16GB