Samsung DDR3 8GB 1600MHz 8GB vs Kingston MSI24D4U7D8MH-16 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Kingston MSI24D4U7D8MH-16 16GB

Kingston MSI24D4U7D8MH-16 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Kingston MSI24D4U7D8MH-16 16GB

需要考虑的原因
Kingston MSI24D4U7D8MH-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 43

左右 -79% 更低的延时
更快的读取速度，GB/s

15.8 14.9

测试中的平均数值
更快的写入速度，GB/s

10.6 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Kingston MSI24D4U7D8MH-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 24
读取速度，GB/s

14.9 15.8
写入速度，GB/s

9.6 10.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 2704

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

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Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Essencore Limited IM44GU48N28-GGGHM 4GB

Essencore Limited IM44GU48N28-GGGHM 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston MSI24D4U7D8MH-16 16GB

Kingston MSI24D4U7D8MH-16 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingston 9965600-027.A01G 16GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

G Skill Intl F4-3733C17-8GTZKK 8GB

G Skill Intl F4-3733C17-8GTZKK 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-4000C17-16GTRGB 16GB

G Skill Intl F4-4000C17-16GTRGB 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Corsair CM4X8GE2666C16K8 8GB

Corsair CM4X8GE2666C16K8 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

V-Color Technology Inc. TL48G26S8KRRGB16 8GB

V-Color Technology Inc. TL48G26S8KRRGB16 8GB