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Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB

Samsung DDR3 8GB 1600MHz 8GB vs Micron Technology 16ATF2G64AZ-2G3H1 16GB

总分
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G3H1 16GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

差异 规格 评论

差异

Samsung DDR3 8GB 1600MHz 8GB 需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.6 left arrow 8.6
    测试中的平均数值
Micron Technology 16ATF2G64AZ-2G3H1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3H1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 43
    左右 -54% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 28
  • 读取速度，GB/s
    14.9 left arrow 14.4
  • 写入速度，GB/s
    9.6 left arrow 8.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2506 left arrow 2489

Samsung DDR3 8GB 1600MHz 8GB RAM的比较

A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9905630-052.A00G 16GB
Kingston 9905630-052.A00G 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston KHX3000C15/16GX 16GB
Kingston KHX3000C15/16GX 16GB
内存RAM
ASint Technology SLA302G08-GGNHC 4GB
ASint Technology SLA302G08-GGNHC 4GB
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
SK Hynix HMA81GR7AFR8N-VK 8GB
SK Hynix HMA81GR7AFR8N-VK 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Panram International Corporation PUD42133C158G2VS 8GB
Panram International Corporation PUD42133C158G2VS 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4X4GF2133C15S2 4GB
Corsair CM4X4GF2133C15S2 4GB
内存RAM
Samsung M378B1G73QH0-CK0 8GB
Samsung M378B1G73QH0-CK0 8GB
Transcend Information JM2666HLE-16G 16GB
Transcend Information JM2666HLE-16G 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Apacer Technology 78.CAGN4.4020B 8GB
Apacer Technology 78.CAGN4.4020B 8GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
内存RAM
Kingston 9905403-02X.A00LF 8GB
Kingston 9905403-02X.A00LF 8GB
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Kingston KHX2666C16D4/4G 4GB
Kingston KHX2666C16D4/4G 4GB
内存RAM