Samsung DDR3 8GB 1600MHz 8GB vs Micron Technology 8ATF1G64HZ-2G3B2 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的读取速度，GB/s

14.9 13.4

测试中的平均数值

Micron Technology 8ATF1G64HZ-2G3B2 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3B2 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 43

左右 -8% 更低的延时
更快的写入速度，GB/s

10.8 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 40
读取速度，GB/s

14.9 13.4
写入速度，GB/s

9.6 10.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 2495

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-16GVK 16GB

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Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

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Kingston 9905744-067.A00G 32GB

Kingston 9905744-067.A00G 32GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMR32GX4M2C3000C15 16GB

Corsair CMR32GX4M2C3000C15 16GB

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Samsung M471B5173DB0-YK0 4GB

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G Skill Intl F4-4133C19-8GTZSWC 8GB