Samsung DDR3 8GB 1600MHz 8GB vs Mushkin 99[2/7/4]200F 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Mushkin 99[2/7/4]200F 8GB

Mushkin 99[2/7/4]200F 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的读取速度，GB/s

14.9 13.7

测试中的平均数值

Mushkin 99[2/7/4]200F 8GB

需要考虑的原因
Mushkin 99[2/7/4]200F 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 43

左右 -65% 更低的延时
更快的写入速度，GB/s

10.3 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Mushkin 99[2/7/4]200F 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 26
读取速度，GB/s

14.9 13.7
写入速度，GB/s

9.6 10.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 2740

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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G Skill Intl F4-4266C17-8GTZRB 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Crucial Technology BL16G36C16U4W.M16FE1 16GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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SK Hynix HMA82GU6JJR8N-VK 16GB

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Crucial Technology CT25664AA800.M16FG 2GB

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Corsair CMU16GX4M2A2666C16 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Crucial Technology BLS4G4D240FSC.8FBD2 4GB

Crucial Technology BLS4G4D240FSC.8FBD2 4GB

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SK Hynix HMA84GR7AFR4N-UH 32GB

SK Hynix HMA84GR7AFR4N-UH 32GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

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G Skill Intl F4-3300C16-8GTZ 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Kingston 9905701-032.A00G 16GB

Kingston 9905701-032.A00G 16GB

AMD R538G1601U2S-UO 8GB

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Corsair CMK16GX4M2D3600C16 8GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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G Skill Intl F4-3600C18-16GTZR 16GB

G Skill Intl F4-3600C18-16GTZR 16GB

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Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB